Novel additive for alkaline texturing of mono-crystalline silicon

被引：0

作者：

Zhou, Su ^{[1
]}

Zhou, Chunlan ^{[1
]}

Yang, Lei ^{[1
]}

Wang, Wenjing ^{[1
]}

Tang, Yehua ^{[1
]}

Chen, Jingwei ^{[1
]}

Yan, Baojun ^{[1
]}

Zhao, Yan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing, Peoples R China

来源：

ADVANCED MANUFACTURING TECHNOLOGY, PTS 1-4 | 2012年 / 472-475卷

关键词：

mono-crystalline silicon; alkaline texturing; dipropylene glycol;

D O I：

10.4028/www.scientific.net/AMR.472-475.2405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Isopropyl alcohol(IPA) is widely used as additive to enhance surface structure and reduce the reflectivity of silicon wafers in alkaline texturing process of mono-crystalline silicon solar cells currently. However, due to its low boiling point and high volatilization, some negative effects are brought into large scale production especially in stability, cost and environment. In this paper, Dipropylene glycol(DPG) which has relative high boiling point was tried to substitute IPA as texturing solution additive. The influences of concentration of DPG and NaOH on etching rate, surface morphology and reflectance spectrum were investigated. It is obviously observed that the silicon is prevented from etching reaction by the existence of DPG. The best weight reflectance of 13.6% is obtained on mono-crystalline silicon surface by an optimized solution of 1 wt% NaOH and 1 wt% DPG at 80 degrees C for 20 minutes. Finally, the influencing mechanism of DPG was also discussed in detail.

引用

页码：2405 / 2409

页数：5

共 13 条

[1]

Birmann K., 2008, P 23 EUR PVSEC

[2] Surface morphology of p-type (100)silicon etched in aqueous alkaline solution [J].

Bressers, PMMC ;

Kelly, JJ ;

Gardeniers, JGE ;

Elwenspoek, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (05) :1744-1750

[3]

Chung H. Y., 2008, INT J PHOTOENERGY

[4]

Moynihan M., 2010, P PHOT SPEC C PVSC 2

[5]

Moynihan M., 2010, P 25 EU PVSEC 5 WC P

[6] Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching [J].

Papet, P. ;

Nichiporuk, O. ;

Kaminski, A. ;

Rozier, Y. ;

Kraiem, J. ;

Lelievre, J. -F. ;

Chaumartin, A. ;

Fave, A. ;

Lemiti, M. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (15) :2319-2328

[7]

Sparber W, 2003, WORL CON PHOTOVOLT E, P1372

[8] Improved anisotropic etching process for industrial texturing of silicon solar cells [J].

Vazsonyi, E ;

De Clercq, K ;

Einhaus, R ;

Van Kerschaver, E ;

Said, K ;

Poortmans, J ;

Szlufcik, J ;

Nijs, J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 57 (02) :179-188

[9]

Wefringhaus E., 2009, P 24 EU PVSEC HAMB G, P1860

[10]

Zhao JH, 1999, PROG PHOTOVOLTAICS, V7, P471, DOI 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO

← 1 2 →