New findings on inversion-layer mobility in highly doped channel Si MOSFETs

被引：0

作者：

Nakabayashi, Y ^{[1
]}

Ishihara, T ^{[1
]}

Koga, J ^{[1
]}

Takayanagi, M ^{[1
]}

Takagi, S ^{[1
]}

机构：

[1] Toshiba Co Ltd, Res & Dev Ctr, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (Pub) has anomalous surface carrier density (N-S) dependence when acceptor concentration (N-A) becomes larger than 2x10(18) cm(-3). The Pub behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (mu(it)) has stronger N-S dependence than ever reported. The mu(it) behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied.

引用

页码：139 / 142

页数：4

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