Femtosecond near-field scanning optical microscopy

被引:5
作者
Nechay, BA [1 ]
Siegner, U
Achermann, M
Morier-Genaud, F
Schertel, A
Keller, U
机构
[1] Swiss Fed Inst Technol, Inst Quantum Elect, ETH Honggerberg, HPT, CH-8093 Zurich, Switzerland
[2] Micrion GmbH, D-85622 Feldkirchen, Germany
来源
JOURNAL OF MICROSCOPY-OXFORD | 1999年 / 194卷
关键词
near-field optics; semiconductors; ultrafast spectroscopy;
D O I
10.1046/j.1365-2818.1999.00528.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
We have developed an instrument for optically measuring carrier dynamics in thin-film materials with approximate to 150 nm lateral resolution, approximate to 250 fs temporal resolution and high sensitivity. This is accomplished by combining an ultrafast pump-probe laser spectroscopic technique with a near-field scanning optical microscope. A diffraction-limited pump and near-field probe configuration is used, with a novel detection system that allows for either two-colour or degenerate pump and probe photon energies, permitting greater measurement flexibility than that reported in earlier published work. The capabilities of this instrument are proven through near-field degenerate pump-probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused ion beam (FIB) implantation We find that lateral carrier diffusion across the nanometre-scale FIB pattern plays a significant role in the decay of the excited carriers within approximate to 1 mu m of the implanted stripes, an effect which could not have been resolved with a far-field system.
引用
收藏
页码:329 / 334
页数:6
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