Preparation of KTiOPO4 thin films on different substrates by pulsed laser deposition

被引：6
|
作者：
Vasa, Nilesh J. [1 ]
Hata, Yasunari [2 ]
Yoshitake, Tsuyoshi [2 ]
Yokoyama, Shigeru [2 ]
机构：
[1] Indian Inst Technol, Dept Mech Engn, Madras 600036, Tamil Nadu, India
[2] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
来源：
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY | 2008年 / 38卷 / 5-6期
关键词：
pulsed laser deposition (PLD); KTiOPO(4) (KTP); integrated optics; electro-optics; nonlinear optics; thin film fabrication;
D O I：
10.1007/s00170-007-1040-x
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Pulsed laser deposition (PLD) technique is applied in fabrication of thin films of KTiOPO(4) (KTP) material, which possesses electro-optic and nonlinear optical properties. Thin film fabrication of optically functional KTP on fused silica and different sapphire substrates by changing an ambient oxygen pressure and a substrate temperature during PLD is investigated. Highly oriented KTP thin films could be grown on sapphire (11 (2) over bar0) in an oxygen atmosphere by PLD using a composite target whose stoichiometry is nearly same as KTP. Although the film contained polycrystalline crystallites, predominant crystallites seemed to be epitaxially grown.
引用
收藏
页码：600 / 604
页数：5
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