Region-dependent behavior of I-V characteristics in n-ZnO:Al/p-Si contacts

被引：8

作者：

Shen, L. ^{[1
]}

Du, H. W. ^{[1
]}

Ding, H. ^{[1
]}

Tang, J. ^{[1
]}

Ma, Z. Q. ^{[1
]}

机构：

[1] Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shanghai 200444, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2010年 / 13卷 / 5-6期

关键词：

Heterojunction; ZnO/Si; I-V; Barrier height;

D O I：

10.1016/j.mssp.2011.02.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The discrepancy of rectifying characteristics in n-ZnO:Al/p-Si heterojunctions from diode to diode was demonstrated by region dependent dark I-V characteristics, where the junction is laterally cut to sequentially decrease the area. Further investigation shows that the junction (2.1 x 2.1 cm(2)) with the barrier height Phi=0.693 eV consists of one part (2.1 x 1.4 cm(2)) with Phi=0.695 eV and the other part (2.1 x 0.7 cm(2)) with Phi=0.686 eV. It is found that reverse currents saturate with different values of 3.6 x 10(-3), 2.5 x 10(-3) and 1.58 x 10(-3) A for the light I-V curves of the three junctions with the same areas. To explain this peculiarity, the probable reason is discussed in terms of carrier transportation through the spatially fluctuating barrier. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：339 / 343

页数：5

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