Enhanced Raman scattering in grooved silicon matrix

被引:10
作者
Mamichev, D. A. [1 ]
Timoshenko, V. Yu. [1 ]
Zoteyev, A. V. [1 ]
Golovan, L. A. [1 ]
Krutkova, E. Yu. [1 ]
Laktyunkin, A. V. [1 ]
Kashkarov, P. K. [1 ]
Astrova, E. V. [2 ]
Perova, T. S. [3 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg, Russia
[3] Univ Dublin Trinity Coll, Dept Elect & Elect Engn, Dublin 2, Ireland
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 01期
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1002/pssb.200844163
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Multiple enchancement of the Stokes Raman scattering in grooved silicon structures, which consist of sequences of voids (grooves) and crystalline Si walls, was observed under excitation with wavelength close to the Si wall width of similar to 1 mu m. The results obtained are interpreted as a manifestation of the partial light localization within the grooved structures, which increases the effective volume of the medium interacting with excitation light. Based on this effect we conclude that grooved silicon structures can act as a matrix for increasing the Raman scattering efficiency to different substances embedded into the grooves. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:173 / 176
页数:4
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