Enhanced Raman scattering in grooved silicon matrix

被引：10

作者：

Mamichev, D. A. ^{[1
]}

Timoshenko, V. Yu. ^{[1
]}

Zoteyev, A. V. ^{[1
]}

Golovan, L. A. ^{[1
]}

Krutkova, E. Yu. ^{[1
]}

Laktyunkin, A. V. ^{[1
]}

Kashkarov, P. K. ^{[1
]}

Astrova, E. V. ^{[2
]}

Perova, T. S. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg, Russia

[3] Univ Dublin Trinity Coll, Dept Elect & Elect Engn, Dublin 2, Ireland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1002/pssb.200844163

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Multiple enchancement of the Stokes Raman scattering in grooved silicon structures, which consist of sequences of voids (grooves) and crystalline Si walls, was observed under excitation with wavelength close to the Si wall width of similar to 1 mu m. The results obtained are interpreted as a manifestation of the partial light localization within the grooved structures, which increases the effective volume of the medium interacting with excitation light. Based on this effect we conclude that grooved silicon structures can act as a matrix for increasing the Raman scattering efficiency to different substances embedded into the grooves. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：173 / 176

页数：4

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