Microstructure Analysis of ALD Bi2Te3/Sb2Te3 Thermoelectric Nanolaminates

被引：3

作者：

Nminibapiel, David ^{[1
,2
]}

Zhang, Kai ^{[1
,2
]}

Tangirala, Madhavi ^{[1
,2
]}

Baumgart, Helmut ^{[1
,2
]}

Chakravadhanula, V. S. K. ^{[3
,4
,5
]}

Kuebel, Christian ^{[3
,5
]}

Kochergin, Vladimir ^{[6
]}

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] Appl Res Ctr, Newport News, VA 23606 USA

[3] Karlsruhe Nano Micro Facil, D-76344 Karlsruhe, Germany

[4] Helmholtz Inst Ulm, Electrochem Energy Storage, D-89081 Ulm, Germany

[5] Karlsruhe Inst Technol, Inst Nanotechnol, D-76344 Karlsruhe, Germany

[6] MicroXact Inc, Christiansburg, VA 24073 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 9 | 2013年 / 58卷 / 10期

基金：

美国国家航空航天局;

关键词：

ATOMIC LAYER DEPOSITION; FIGURE; FILMS;

D O I：

10.1149/05810.0059ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The fabrication of thermoelectric nanolaminate structures of alternating Bi2Te3 and Sb2Te3 ALD layers for thermoelectric application is reported. Trimethylsilyl telluride ((Me3Si)(2)Te), bismuth trichloride (BiCl3) and antimony trichloride (SbCl3) were utilized as chemical ALD precursors for tellurium, bismuth and antimony, respectively. The results of field emission scanning electron microscopy (FE-SEM) indicate that both metal tellurides exhibit the prevalent Volmer-Weber island growth mechanism with characteristic hexagonal crystallites. High resolution TEM X-section analysis reveals localized epitaxial growth of alternating ALD Bi2Te3 and Sb2Te3 layers within the large islands.

引用

页码：59 / 66

页数：8

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