Dry etching characteristics of Mo and Al2O3 films in O2/Cl2/Ar inductively coupled plasmas

被引：9

作者：

Kwon, Kwang-Ho ^{[1
]}

Efremov, Alexander ^{[2
]}

Yun, Sun Jin ^{[3
]}

Chun, Inwoo ^{[1
]}

Kim, Kwangsoo ^{[4
]}

机构：

[1] Korea Univ, Dept Control & Instrumentat Engn, Sejong 339700, South Korea

[2] State Univ Chem & Technol, Dept Elect Devices & Mat Technol, Ivanovo 153000, Russia

[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea

[4] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea

来源：

THIN SOLID FILMS | 2014年 / 552卷

关键词：

Thin films; Molybdenum; Aluminum oxide; Etching rate; Etching mechanism; Plasma model; Inductively coupled plasma; HIGH-DENSITY; CHLORINE ATOMS; THIN-FILMS; MODEL; AR; EVOLUTION; KINETICS; SILICON; AR/O-2; CL-2;

D O I：

10.1016/j.tsf.2013.12.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An investigation of etching characteristics and mechanisms of thin Mo and Al2O3 films in O-2/Cl-2/Ar inductively coupled plasmas under the condition of fixed gas pressure (0.8 Pa), input power (700 W) and bias power (200 W) was carried out. It was found that an increase in the O-2 mixing ratio resulted in a non-monotonic Mo etching rate (with a maximum of 320 nm/min at 40-45% O-2) while the Al2O3 etching rate decreased monotonically. Plasma parameters and composition were investigated using a combination of a zero-dimensional plasma model and plasma diagnostics by double Langmuir probes. The analysis of etching kinetics involving modelpredicted fluxes of plasma active species allows one to relate the non-monotonic Mo etching rate to the change in reaction probability. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：105 / 110

页数：6

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