In situ Photocurrent Measurements of Thin- Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition

被引：14
|
作者：
Nunomura, Shota [1 ]
Sakata, Isao [1 ]
Kondo, Michio [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 12期
关键词：
HYDROGENATED AMORPHOUS-SILICON; RELAXATION; DEFECTS; SURFACE; GROWTH; ABSORPTION; DIFFUSION; STATE;
D O I：
10.7567/APEX.6.126201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time evolutions of photocurrents in hydrogenated amorphous silicon films under plasma-enhanced chemical vapor deposition have been measured. The photocurrent is gradually increased with growth time, and the corresponding photoconductivity is improved. The improvement is dependent on the temperature, and more pronounced during postgrowth annealing. The postgrowth annealing plays an important role in improving the transport of photoexcited carriers. (C) 2013 The Japan Society of Applied Physics
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页数：4
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