A Novel PbS/n-IGZO Thin-Film Nano-Photodetector with High Responsivity and High Photo-to-dark Current Ratio

被引：0

作者：

Meng, Ying ^{[1
,2
,3
]}

Wang, Jiawei ^{[1
]}

Ming, Anjie ^{[1
,2
]}

Wang, Yinghui ^{[1
,2
,3
]}

Shi, Xuewen ^{[1
,2
]}

Li, Molin ^{[4
]}

Zhang, Jing ^{[5
]}

Wang, Weibing ^{[1
,2
]}

Li, Ling ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100029, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Kunshan Branch, Kunshan 215347, Jiangsu, Peoples R China

[4] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

[5] North China Univ Technol, Elect Informat Engn Coll, Beijing 100144, Peoples R China

来源：

2018 13TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS 2018) | 2018年

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Photodetector; lIeterojunction; InGaZnO; Thin film PbS; QUANTUM; PHOTOTRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel back gate phototransistor detector was developed. In this detector, Indium-Gallium-Zinc Oxide (IGZO) as the active layer was capped with PbS (Lead sulfide) thin film. It could be used as photodetector in the visible spectrum. An interdigital comb structure with high width-to-length ratio as source and drain electrodes was adopted to increase the device responsivity. It is useful to reduce the cost using PVD (Physical Vapor Deposition) for PbS film preparation by simplifing the fabrication process. The developed device exhibits mobility (a) as high as 8.69 cm2V-ls-1 and the responsivity up to 2.68x101 AJW, in addition with relative high photo to dark current ratio of 107, low off-state current 1.0 x10-14A, high on/off current (Lnibiy) ratio of 108 and better stability.

引用

页码：131 / 134

页数：4

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