Preparation and investigation of sputtered vanadium dioxide films with large phase-transition hysteresis loops

被引:30
作者
Zhang, Huafu [1 ,2 ]
Wu, Zhiming [1 ]
He, Qiong [1 ]
Jiang, Yadong [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
Vanadium dioxide; Hysteresis width; Thin films; Reactive magnetron sputtering; Phase transition temperature; METAL-INSULATOR-TRANSITION; THIN-FILMS; OPTICAL-PROPERTIES; VO2; SEMICONDUCTOR;
D O I
10.1016/j.apsusc.2013.04.028
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vanadium dioxide (VO2) films with large phase-transition hysteresis loops were fabricated on glass substrates by reactive direct current (DC) magnetron sputtering in Ar/O-2 atmosphere and subsequent in situ annealing process in pure oxygen. The crystal structure, chemical composition, morphology and metal-insulator transition (MIT) properties of the deposited films were investigated. The results reveal that the films show a polycrystalline nature with a (0 1 1) preferred orientation and consist of small spheroidal nanoparticles. All the deposited VO2 films show large hysteresis loops due to the small density of nucleating defects and the large interfacial energies, which are determined by the characteristics of the particles in the films, namely the small transversal grain size and the spheroidal shape. The film comprising the smallest spheroidal nanoparticles not only shows a large hysteresis width of 36.3 degrees C but also shows a low transition temperature of 32.2 degrees C upon cooling. This experiment facilitates the civilian applications of the VO2 films on glass substrates in optical storage-type devices. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:218 / 222
页数:5
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