The effect of dual Fe+/He+ ion beam irradiation on microstructural changes in FeCrAl ODS alloys

被引：27

作者：

Chen, C. -L. ^{[1
]}

Richter, A. ^{[2
]}

Koegler, R. ^{[3
]}

机构：

[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 97401, Hualien, Taiwan

[2] Tech Univ Appl Sci Wildau, Dept Engn, D-15745 Wildau, Germany

[3] Helmholtz Res Ctr Dresden Rossendorf HZDR, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 586卷

关键词：

Oxide dispersion strengthened (ODS) alloys; Dual beam ion implantation; Vacancy clusters; Transmission electron microscopy; Nanoindentation; YTTRIUM ALUMINUM PEROVSKITE; SENSING INDENTATION; ELASTIC-MODULUS; HARDNESS; HELIUM; EVOLUTION; STEELS; DEFECT;

D O I：

10.1016/j.jallcom.2012.11.113

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanostructured ferritic oxide dispersion strengthened (ODS) alloys contain a high density of Y-Al-Ti-O nanoparticles, high dislocation densities and fine grains. Structural analysis with HRTEM shows that the composition of the initial Y2O3 oxide is modified to perovskite YAlO3 (YAP), Y2Al5O12 garnet (YAG) and Y4Al2O9 monoclinic (YAM) particles. Irradiation of these alloys was performed with a dual beam implantation of 2.5 MeV Fe+ and 350 keV He+, either simultaneously or sequentially. Additionally, the He+ concentration was varied between 18 and 72 appm/dpa. Irradiation causes atomic displacements resulting in vacancy and self-interstitial lattice defects and dislocation loops. A clear hardness increase in the irradiated area is observed by nanoindentation in every ion implantation regime. Hardness ratios of irradiated relative to non-irradiated ODS materials and the appearance of hardness maxima close to the surface region are discussed in detail. The irradiation induced hardening effect is stronger for a heat treated HT-ODS alloy than for an as-received one. The large difference in the hardness data of as-received ODS for simultaneous and sequential implantation can be explained by point defect recombination at dislocations and grain boundaries occurring for sequential irradiation. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：S173 / S179

页数：7

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