Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization

被引：17

作者：

Kim, Do-Hyun ^{[1
,2
]}

Lim, Sung Kwan ^{[3
]}

Bae, Hagyoul ^{[1
]}

Kim, Choong-Ki ^{[1
]}

Lee, Seung-Wook ^{[1
,4
]}

Seo, Myungsoo ^{[1
,4
]}

Kim, Seong-Yeon ^{[1
,2
]}

Hwang, Kyu-Man ^{[1
,4
]}

Lee, Geon-Beom ^{[1
]}

Lee, Byoung Hun ^{[5
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[2] SK Hynix Inc, Icheon 17336, South Korea

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Gwangju 61005, South Korea

[4] Samsung Elect, Semicond Res & Dev Ctr, Hwasung 445701, South Korea

[5] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 61005, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 04期

关键词：

Dangling bond; deuterium (D-2); field-effect mobility (mu); hydrogen passivation; interface trap density (D-it); low frequency noise (LFN); oxide trap density (N-ot); poly-crystalline silicon thin-film transistor (poly-Si TFT); THIN-FILM TRANSISTORS; 1/F NOISE; HYDROGEN PASSIVATION; SILICON; INTERFACE; DEFECTS; DENSITY;

D O I：

10.1109/TED.2018.2805316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deuterium (D-2) annealing was applied to a poly-crystalline silicon thin-film transistor (poly-Si TFT) to improve reliability and performance. The field-effect electron mobility (mu) was extracted using the gate transconductance (gm) method. It was found that mu was improved before and after D-2 annealing. The interface trap density (D-it) as well as the oxide trap density (N-ot) in the poly-Si TFTs was quantitatively extracted using both conventional dc I-V characterization and analysis of low frequency noise (LFN). The profile of N-ot along the depth direction was investigated before and after D-2 annealing using LFN characteristics. It was confirmed that D-it as well as N-ot was reduced by the D-2 annealing, resulting in a reduction in power spectral density and variation.

引用

页码：1640 / 1644

页数：5

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