Diffraction-line broadening due to strain fields in materials; Fundamental aspects and methods of analysis

被引:70
作者
vanBerkum, JGM
Delhez, R
deKeijser, TH
Mittemeijer, EJ
机构
[1] Laboratory of Materials Science, Delft University of Technology, 2628 AL Delft
[2] Philips Research Laboratories, 5656 AA Eindhoven
来源
ACTA CRYSTALLOGRAPHICA SECTION A | 1996年 / 52卷
关键词
D O I
10.1107/S0108767396005727
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Broadening of (X-ray) diffraction lines is often due to the distortion fields associated with lattice defects as dislocations. A generally applicable flexible model for distributions of lattice defects and their distortion fields is presented. The model allows a straightforward calculation of diffraction-line profiles. Parameters of the model are the average distance between the defects, the extent of the distortion fields and the mean-squared strain. The order dependence of the shape and width of line profiles is studied as a function of these model parameters. The adequacy for practical application of two methods frequently used to analyse X-ray diffraction-line broadening (the Warren-Averbach analysis and the Williamson-Hall analysis) is investigated by applying them to calculating hue profiles. The 'size' and 'strain' parameters deduced by the methods mentioned are discussed with reference to the strain-field model parameters. It is concluded that only in limiting cases can the results be related directly to the microstructure. Experimental line profiles taken from a ball-milled tungsten powder are used to show that the line profiles calculated on the basis of the strain-field model pertain to realistic situations. It is shown that, in principle, an interpretation of measured line broadening is possible directly in terms of strain-held parameters.
引用
收藏
页码:730 / 747
页数:18
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