In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

被引：94

作者：

Gschrey, M. ^{[1
]}

Gericke, F. ^{[1
]}

Schuessler, A. ^{[1
]}

Schmidt, R. ^{[1
]}

Schulze, J. -H. ^{[1
]}

Heindel, T. ^{[1
]}

Rodt, S. ^{[1
]}

Strittmatter, A. ^{[1
]}

Reitzenstein, S. ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 25期

关键词：

Semiconducting indium gallium arsenide - Cathodoluminescence - Electron beams - Gallium alloys - Semiconductor alloys - Temperature - Photoluminescence spectroscopy - Indium alloys - Nanocrystals - Semiconductor quantum dots;

D O I：

10.1063/1.4812343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the deterministic fabrication of sub-mu m mesa-structures containing single quantum dots (QDs) by in situ electron-beam lithography. The fabrication method is based on a two-step lithography process: After detecting the position and spectral features of single InGaAs QDs by cathodoluminescence (CL) spectroscopy, circular sub-mu m mesa-structures are defined by high-resolution electron-beam lithography and subsequent etching. Micro-photoluminescence spectroscopy demonstrates the high optical quality of the single-QD mesa-structures with emission linewidths below 15 mu eV and g((2))(0) = 0.04. Our lithography method has an alignment precision better than 100 nm which paves the way for a fully deterministic device technology using in situ CL lithography. (C) 2013 AIP Publishing LLC.

引用

页数：4

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