Self-supporting tantalum masks for deep X-ray lithography with synchrotron radiation

被引：0

作者：

Litvina, SV ^{[1
]}

Kanaev, VG ^{[1
]}

Larionova, EG ^{[1
]}

Glazunova, NV ^{[1
]}

Gromova, LP ^{[1
]}

Yurchenko, VI ^{[1
]}

Timchenko, NA ^{[1
]}

Mezentseva, LA ^{[1
]}

Nazmov, VP ^{[1
]}

Pindyurin, VF ^{[1
]}

机构：

[1] Res Inst Semicond Devices, Tomsk, Russia

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷

关键词：

X-ray mask; synchrotron radiation; contrast; reactive ion etching; plasma-chemical deposition;

D O I：

10.1117/12.351115

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Development of the present-day technologies of manufacturing deep structures with submicron elements bases on the deep X-ray lithography method with the usage of synchrotron radiation. Microelectronics-used X-ray patterns with a to 1.0 mu m golden masking covering on different-type membranes become of unfit in this case both from the angle of contrast and from the standpoint of radiation and heat stability. X-ray patterns with the membrane an the base of tantalum 2 mu m thick, that are high contrasting as to synchrotron radiation with wavelength of 0.2 to 1.0 nm, have been developed and manufactured. A set of pores 0.7 mu m in diameter 1.5 mu m apart in two directions was formed as the topological pattern.

引用

页码：426 / 428

页数：3