Non equilibrium electrons in THz quantum cascade lasers

被引:2
作者
Vitiello, Miriam Serena [1 ]
Scamarcio, Gaetano [1 ]
Spagnolo, Vincenzo [1 ]
机构
[1] Univ Bari, INFM, Reg Lab LIT, I-70126 Bari, Italy
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS V | 2006年 / 6133卷
关键词
infrared and far infrared lasers; semiconductor lasers; electronic distribution; photoluminescence;
D O I
10.1117/12.641467
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We compare the electrical power dependence of the lattice temperature and the electronic temperature of THz quantum cascade lasers (QCLs) operating in the range 2.5- 3.8 THz and based on a resonant-phonon and bound-to-continnum quantum design. This analysis is performed by means of microprobe band-to-band photoluminescence experiments carried out on operating THz QCLs both below and above the lasing threshold. Thermalized non-equilibrium hot-electron distributions are found in both classes of QCLs. While in the case of bound-to-continuum devices a unique value of the electronic temperature is found in the active region minibands, in the case of resonant-phonon devices we found that the upper radiative state, in the lasing range, heats up to similar to 200 K, more than 100 K with respect to the ground state levels. From the measured thermal resistance and the power dependence of the ground state electronic temperature we obtain in the case of resonant-phonon structures a value of the electron-lattice energy relaxation rate comparable with that typical of mid-infrared QCLs, in the case of resonant-phonon structures and a value similar to 50 times higher in bound-to-continuum devices.
引用
收藏
页数:11
相关论文
共 22 条
[1]   High power quantum cascade lasers operating at λ≃87 and 130 μm [J].
Ajili, L ;
Scalari, G ;
Faist, J ;
Beere, H ;
Linfield, E ;
Ritchie, D ;
Davies, G .
APPLIED PHYSICS LETTERS, 2004, 85 (18) :3986-3988
[2]   Analysis of transport properties of tetrahertz quantum cascade lasers [J].
Callebaut, H ;
Kumar, S ;
Williams, BS ;
Hu, Q ;
Reno, JL .
APPLIED PHYSICS LETTERS, 2003, 83 (02) :207-209
[3]   FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS [J].
DAWSON, P ;
DUGGAN, G ;
RALPH, HI ;
WOODBRIDGE, K .
PHYSICAL REVIEW B, 1983, 28 (12) :7381-7383
[4]   Theory of gain spectra for quantum cascade lasers and temperature dependence of their characteristics at low and moderate carrier concentrations [J].
Gorfinkel, VB ;
Luryi, S ;
Gelmont, B .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (11) :1995-2003
[5]   The nature of the electron distribution functions in quantum cascade lasers [J].
Harrison, P .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2800-2802
[6]   The relative importance of electron-electron and electron-phonon scattering in terahertz quantum cascade lasers [J].
Harrison, P ;
Kelsall, RW .
SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1449-1451
[7]   Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides [J].
Hu, Q ;
Williams, BS ;
Kumar, S ;
Callebaut, H ;
Kohen, S ;
Reno, JL .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (07) :S228-S236
[8]   EXCITON LINE-SHAPES OF GAAS/ALAS MULTIPLE-QUANTUM WELLS [J].
HUMLICEK, J ;
SCHMIDT, E ;
BOCANEK, L ;
SVEHLA, R ;
PLOOG, K .
PHYSICAL REVIEW B, 1993, 48 (08) :5241-5248
[9]   Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach [J].
Iotti, RC ;
Rossi, F .
APPLIED PHYSICS LETTERS, 2001, 78 (19) :2902-2904
[10]   Terahertz quantum-cascade lasers based on an interlaced photon-phonon cascade [J].
Köhler, R ;
Tredicucci, A ;
Mauro, C ;
Beltram, F ;
Beere, HE ;
Linfield, EH ;
Davies, AG ;
Ritchie, DA .
APPLIED PHYSICS LETTERS, 2004, 84 (08) :1266-1268