Non equilibrium electrons in THz quantum cascade lasers

被引:2
作者
Vitiello, Miriam Serena [1 ]
Scamarcio, Gaetano [1 ]
Spagnolo, Vincenzo [1 ]
机构
[1] Univ Bari, INFM, Reg Lab LIT, I-70126 Bari, Italy
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS V | 2006年 / 6133卷
关键词
infrared and far infrared lasers; semiconductor lasers; electronic distribution; photoluminescence;
D O I
10.1117/12.641467
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We compare the electrical power dependence of the lattice temperature and the electronic temperature of THz quantum cascade lasers (QCLs) operating in the range 2.5- 3.8 THz and based on a resonant-phonon and bound-to-continnum quantum design. This analysis is performed by means of microprobe band-to-band photoluminescence experiments carried out on operating THz QCLs both below and above the lasing threshold. Thermalized non-equilibrium hot-electron distributions are found in both classes of QCLs. While in the case of bound-to-continuum devices a unique value of the electronic temperature is found in the active region minibands, in the case of resonant-phonon devices we found that the upper radiative state, in the lasing range, heats up to similar to 200 K, more than 100 K with respect to the ground state levels. From the measured thermal resistance and the power dependence of the ground state electronic temperature we obtain in the case of resonant-phonon structures a value of the electron-lattice energy relaxation rate comparable with that typical of mid-infrared QCLs, in the case of resonant-phonon structures and a value similar to 50 times higher in bound-to-continuum devices.
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页数:11
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