PHYSICAL PROPERTIES OF In2S3 THIN FILMS GROWN BY CHEMICAL BATH DEPOSITION AT DIFFERENT TEMPERATURES

被引：0

作者：

Rodriguez-Hernandez, P. E. ^{[1
]}

De Moure-Flores, F. ^{[1
]}

Guillen-Cervantes, A. ^{[2
]}

Campos-Gonzalez, E. ^{[1
]}

Santos-Cruz, J. ^{[1
]}

Mayen-Hernandez, S. A. ^{[1
]}

Arias-Ceron, J. S. ^{[3
]}

Olvera, M. De La L. ^{[3
]}

Zelaya-Angel, O. ^{[2
]}

Contreras-Puente, G. ^{[4
]}

机构：

[1] Univ Autonoma Queretaro, Fac Quim, Mat, Queretaro 76010, Mexico

[2] CINVESTAV, IPN, Dept Fis, Apdo Postal 14-740, Mexico City, DF, Mexico

[3] CINVESTAV, IPN, Dept Ingn Elect, Secc Estado Solido, Apdo Postal 14-740, Mexico City, DF, Mexico

[4] IPN, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico

来源：

CHALCOGENIDE LETTERS | 2016年 / 13卷 / 08期

关键词：

In2S3; films; Chemical bath deposition; Room temperature photoluminescence; Optical properties; Solar cells applications; SOLAR-CELLS; CBD;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium sulphide thin films were deposited on SnO2:F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl3 and C2H5NS were employed as indium and sulfur sources, respectively. The In2S3 films were deposited at temperatures of: 60 degrees C, 70 degrees C and 80 degrees C. The as-grown films were annealed at 300 degrees C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In2S3 films with tetragonal phase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In2S3 films have high transmission in the visible range and a bandgap above 2.50 eV.

引用

页码：389 / 396

页数：8

共 15 条

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