Fully integrated active magnetic probe for high-definition near-field measurement

被引：6

作者：

Aoyama, Satoshi ^{[1
]}

Yamaguchi, Masahiro ^{[2
]}

Kawahito, Shoji ^{[3
]}

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 980, Japan

[3] Shizuoka Univ, Res Inst Elect, Shizuoka 4228526, Japan

来源：

2006 IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, VOLS 1-3, PROCEEDINGS | 2006年

关键词：

active probe; magnetic probe; near-field measurement; noise mapping; SOI-CMOS; EMI; EMC;

D O I：

10.1109/ISEMC.2006.1706340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to diagnose the topical EMI problem in ICs, a fully integrated active magnetic probe has been developed in SOI-CMOS technology. A 2-turn differential coil, differential amplifiers, a differential to single-ended converter, a output buffer and bias circuits are all integrated in a single-chip. Measurement result shows that it gains the high e-field suppression ratio of 38.0dB at 50MHz. Furthermore, the first 2D magnetic distribution map has been drawn by the active probe. The obtained image is finer than that of a shielded loop coil and it can prove an active probe to be a pragmatic diagnosis tool.

引用

页码：426 / 429

页数：4

共 9 条

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