Electronic passivation of 3C-SiC(001) via hydrogen treatment

被引：11
|
作者：
Coletti, C. [1 ]
Frewin, C. L. [1 ]
Hoff, A. M. [1 ]
Saddow, S. E. [1 ]
机构：
[1] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 10期
关键词：
D O I：
10.1149/1.2961590
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Electronic passivation of single-crystal, atomically flat (001) surfaces of cubic silicon carbide (3C-SiC) was attempted via hydrogen annealing and HF exposure and investigated by monitoring the surface potentials of the treated samples. It was found that HF treatment causes a negative charging of the surface and that only hydrogen annealing is effective in producing well-passivated 3C-SiC. The degree and stability of the surface electronic passivation was dependent on the final hydrogen cooling temperature of the annealing process. Surface charge densities of the hydrogen-treated surfaces were calculated from the measured surface potentials and were found to be in the 10(10) cm(-2) range.
引用
收藏
页码：H285 / H287
页数：3
相关论文
共 50 条
  • [31] Atomic and electronic-band structures of anomalous carbon dimers on 3C-SiC(001)-c(2 x 2)
    Yeom, HW
    Shimomura, M
    Kitamura, J
    Hara, S
    Tono, K
    Matsuda, I
    Mun, BS
    Huff, WAR
    Kono, S
    Ohta, T
    Yoshida, S
    Okushi, H
    Kajimura, K
    Fadley, CS
    PHYSICAL REVIEW LETTERS, 1999, 83 (08) : 1640 - 1643
  • [32] 3C-SiC growth on (001) Si substrates by using a multilayer buffer
    Canino, Andrea
    Severino, Andrea
    Piluso, Nicolo
    La Via, Francesco
    Privitera, Stefania
    Alberti, Alessandra
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 263 - +
  • [33] Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD
    Zhu, Peipei
    Yang, Meijun
    Xu, Qingfang
    Sun, Qingyun
    Tu, Rong
    Li, Jun
    Zhang, Song
    Li, Qizhong
    Zhang, Lianmeng
    Goto, Takashi
    Shi, Ji
    Li, Haiwen
    Ohmori, Hitoshi
    Kosinova, Marina
    Basu, Bikramjit
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 101 (09) : 3850 - 3856
  • [34] 3C-SiC nanocrystal growth on 10° miscut Si(001) surface
    Deokar, Geetanjali
    D'Angelo, Marie
    Demaille, Dominique
    Cavellin, Catherine Deville
    THIN SOLID FILMS, 2014, 556 : 195 - 199
  • [35] Mechanism of hydrogen sensing at Ru/3C-SiC Schottky junction vis-a-vis Pd/3C-SiC interfaces
    Roy, S
    Jacob, C
    Basu, S
    SENSOR LETTERS, 2003, 1 (01) : 47 - 50
  • [36] Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates
    Zheng, XH
    Qu, B
    Wang, YT
    Dai, ZZ
    Han, JY
    Yang, H
    Liang, JW
    JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 40 - 44
  • [37] Characterisation of 3C-SiC crystallites grown on Si (001) by CO annealing
    Krafcsik, OH
    Radnóczi, GZ
    Tóth, L
    Pécz, B
    Deák, P
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 189 - 192
  • [38] Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
    Vacek, Petr
    Frentrup, Martin
    Lee, Lok Yi
    Massabuau, Fabien C. P.
    Kappers, Menno J.
    Wallis, David J.
    Groeger, Roman
    Oliver, Rachel A.
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (15)
  • [39] Dimer configurations of 3C-SiC(001) Si-terminated surface
    Kitamura, J
    Hara, S
    Okushi, H
    Yoshida, S
    Misawa, S
    Kajimura, K
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 55 - 58
  • [40] Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review
    Pradeepkumar, Aiswarya
    Gaskill, D. Kurt
    Iacopi, Francesca
    APPLIED SCIENCES-BASEL, 2020, 10 (12): : 1 - 32
12345