Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application

被引：0
|
作者：
Yang, B [1 ]
Huang, R [1 ]
Zhang, X [1 ]
Wang, YY [1 ]
机构：
[1] Beijing Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.786092
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-on-Insulator(SOI) technology compare with bulk circuit, an obvious improvement in power consumption and speed is always observed for the corresponding SOI circuit [1,2]. Due to their electrical properties [3,4], SOI devices may be a solution for low-power application. But FD devices PD devices have different properties. Detailed analysis and comparison between the different SOI devices operating at low voltage is extremely needed. In this paper, Medici 4.0 is used to study FD and PD devices. Different device parameters' influence on devices and circuits behavior is described.
引用
收藏
页码：734 / 737
页数：2
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