Polarization fluctuation dominated electrical transport processes of polymer-based ferroelectric field effect transistors

被引：40

作者：

Senanayak, Satyaprasad P. ^{[1
]}

Guha, S. ^{[2
]}

Narayan, K. S. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 11期

关键词：

CARRIER DENSITY; TEMPERATURE-DEPENDENCE; DEPOLARIZATION-FIELD; CHARGE-TRANSPORT; MOLECULAR-WEIGHT; PHASE-TRANSITION; GATE DIELECTRICS; THIN-FILMS; ON VOLTAGE; MOBILITY;

D O I：

10.1103/PhysRevB.85.115311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric field effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.

引用

页数：9

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