Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

被引:62
作者
Pandey, Rahul [1 ]
Chaujar, Rishu [1 ]
机构
[1] Delhi Technol Univ, Dept Engn Phys, Main Bawana Rd, New Delhi 110042, India
关键词
Perovskite; Organic-inorganic halide; Silicon; Simulation; Solar cell; Tandem; FRONT SURFACE;
D O I
10.1016/j.spmi.2016.10.033
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, a novel four-terminal perovskite/SiC-based rear contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 mu m and 10 pm thick rear contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 gm and 10 mu m thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:656 / 666
页数:11
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