Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

被引：155
|
作者：
Park, Min Hyuk [1 ]
Kim, Han Joon
Kim, Yu Jin
Lee, Woongkyu
Kim, Hyo Kyeom
Hwang, Cheol Seong
机构：
[1] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
INDUCED DEGRADATION; HYDROGEN; CAPACITORS; HFO2; PB(ZR; TI)O-3; DEPENDENCE; SI;
D O I：
10.1063/1.4798265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films were examined. Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.5Zr0.5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O-3. Pt worked as a catalyst for H-incorporation, and maximum 2P(r) loss of similar to 40% occurred. However, the insertion of a similar to 20-nm-thick TiN layer between Pt and Hf0.5Zr0.5O2 decreased the degradation to similar to 12%. Hf0.5Zr0.5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798265]
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页数：4
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