Designer quantum spin Hall phase transition in molecular graphene

被引:27
作者
Ghaemi, Pouyan [1 ]
Gopalakrishnan, Sarang [1 ]
Hughes, Taylor L. [1 ]
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 20期
基金
美国国家科学基金会;
关键词
DIRAC FERMIONS; SURFACE-STATES; WELLS;
D O I
10.1103/PhysRevB.86.201406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Graphene was the first material predicted to be a time-reversal-invariant topological insulator [C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)]; however, the insulating gap is immeasurably small owing to the weakness of spin-orbit interactions in graphene. A recent experiment [K. K. Gomes, W. Mar, W. Ko, F. Guinea, and H. C. Manoharan, Nature (London) 483, 306 (2012)] demonstrated that designer honeycomb lattices with graphenelike "Dirac" band structures can be engineered by depositing a regular array of carbon monoxide atoms on a metallic substrate. Here, we argue that by growing such designer lattices on metals or semiconductors with strong spin-orbit interactions, one can realize an analog of graphene with strong intrinsic spin-orbit coupling, and hence a highly controllable two-dimensional topological insulator. We estimate the range of substrate parameters for which the topological phase is achievable, and consider the experimental feasibility of some candidate substrates.
引用
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页数:5
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