MOCVD of CdTe on foreign substrates

被引：1

作者：

Bernardi, S

机构：

来源：

ADVANCES IN CRYSTAL GROWTH | 1996年 / 203卷

关键词：

cadmium telluride; MOCVD; hybrid substrates for HgCdTe; infrared detectors; nuclear detectors;

D O I：

10.4028/www.scientific.net/MSF.203.115

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Working with an home made 3 inch MOCVD horizontal reactor the epitaxial growth of CdTe films on (0001) Sapphire and (111) Silicon substrates has been performed. To obtain the best films lateral uniformity on large area substrates, low pressure growth conditions were used. Deposition temperatures ranging from 340 to 420 degrees C were experimented by using DimethylCadmium (DMCd) and DiisopropylTelluride (DIPTe) as precursors. In-situ pre-growth substrate treatments have been performed to obtain the CdTe heteroepitaxial nucleation: - high temperature (900 divided by 1000 degrees C) pre-bake for Sapphire, and - vapour phase Tellurium etching for Silicon. A first set of morphological optical and structural characteristics of CdTe films is presented in connection with the experimental pre-treatments and growth conditions used.

引用

收藏

页码：115 / 121

页数：7

相关论文

共 9 条

[1] SPATIAL UNIFORMITY OF MINORITY-CARRIER LIFETIME IN POLYCRYSTALLINE CDTE SOLAR-CELLS [J].

AHRENKIEL, RK ;

KEYES, BM ;

LEVI, DL ;

EMERY, K ;

CHU, TL ;

CHU, SS .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2879-2881

[2]

BHAT I, 1993, APPL PHYS LETT, V6, P566

[3] THIN-FILM CDS/CDTE SOLAR-CELL WITH 15.8-PERCENT EFFICIENCY [J].

BRITT, J ;

FEREKIDES, C .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2851-2852

[4] THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES [J].

GIESS, J ;

GOUGH, JS ;

IRVINE, SJC ;

BLACKMORE, GW ;

MULLIN, JB ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :120-125

[5] HIGH-QUALITY CDTE AND ITS APPLICATION TO RADIATION DETECTORS [J].

OHMORI, M ;

IWASE, Y ;

OHNO, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :283-290

[6] CDTE DETECTORS IN MEDICINE - A REVIEW OF CURRENT APPLICATIONS AND FUTURE PERSPECTIVES [J].

SCHEIBER, C ;

CHAMBRON, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (03) :604-614

[7]

SCHMIT JL, 1984, J VAC TECHNOL A, V3, P89

[8] ANOMALOUS TEMPERATURE-DEPENDENCE OF LATTICE-PARAMETERS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION CDTE GROWN ON GAAS [J].

STAUDENMANN, JL ;

HORNING, RD ;

KNOX, RD ;

ARCH, DK ;

SCHMIT, JL .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :994-996

[9] FABRICATION AND CHARACTERISTICS OF A SUBMILLIMETER DETECTOR ELEMENT FORMED ON A CDTE SINGLE-CRYSTAL WAFER AS A MULTICHANNEL DETECTOR ARRAY APPLICABLE TO DIAGNOSTIC - IMAGING WITH ENERGY INFORMATION [J].

TSUTSUI, H ;

OHTSUCHI, T ;

OHMORI, K ;

BABA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A) :228-233