Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties

被引：0
|
作者：
Kropman, D. [1 ,3 ]
Mellikov, E. [1 ]
Kaerner, T. [2 ]
Laas, T. [3 ]
Medvid, A. [4 ]
Onufrijevs, P. [4 ]
Dauksta, E. [4 ]
机构：
[1] Tallinn Univ Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
[2] Univ Tartu, Tartu, Estonia
[3] Tallinn Univ, Tallinn, Estonia
[4] Riga Tech Univ, Riga, Latvia
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV | 2011年 / 178-179卷
关键词：
Si-SiO2-Si3N4; interface; EPR; point defects; stress relaxation; POINT-DEFECTS;
D O I：
10.4028/www.scientific.net/SSP.178-179.259
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of stress relaxation investigation by analyses of EPR spectra, IR absorption spectra, SEM and samples deflection, are presented. It has been shown that the stress relaxation mechanisms depends on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the relaxation of stresses by the strains occur due to the opposite sign of the thermal expansion coefficients of Si-SiO2 and Si3N4 on Si. Laser irradiation was used to modify the stresses in system.
引用
收藏
页码：259 / +
页数：2
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