Domain structures in hot-press sintered SrBi2Ta1.6Nb0.4O9 and SrBi2Ta2O9 ferroelectric ceramics

被引：2
|
作者：
Wang, Wen [1 ]
Rao, Jiancun [1 ]
Ke, Hua [1 ]
Meng, Xianghe [1 ]
Jia, Dechang [1 ]
Zhou, Yu [1 ]
机构：
[1] Harbin Inst Technol, Dept Mat Sci, Inst Adv Ceram, Harbin 150001, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2012年 / 38卷 / 05期
基金：
中国国家自然科学基金;
关键词：
SrBi2Ta2O9; SrBi2Ta1.6Nb0.4O9; Ferroelectric ceramic; Hot-press sintering; Domain structure; DIELECTRIC-PROPERTIES; ABI(2)TA(2)O(9); SRBI2NB2O9; TANTALATE; GROWTH; CA; SR;
D O I：
10.1016/j.ceramint.2012.01.050
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SrBi2Ta1.6Nb0.4O9 (SBTN) and SrBi2Ta2O9 (SBT) ceramics with typical bismuth layered perovskite structure were synthesized by hot-press sintering at 1000 degrees C for 2 h. The maximum relative density of as-sintered SBTN and SBT materials is 98.97%. The domain structure of SBTN and SBT was systemically characterized by means of TEM and HRTEM. The 90 degrees domain walls were identified by the 90 degrees rotation relationship of the electron diffraction pattern along the [0 0 1] zone axis. Irregular shaped and highly curved 180 degrees domain wall were also observed in SBTN ceramics. The traditional alpha-fringes can be found in SBT, which are the evidence of large strains in hot-press sintering ceramics. Rod-like SrTa2O6 precipitates are also analyzed as well as its interface with the matrix. (C) 2012 Elsevier Ltd and Team Group S.r.l. All rights reserved.
引用
收藏
页码：3963 / 3967
页数：5
相关论文
共 50 条
  • [41] Enhancement of dielectric and ferroelectric properties of dysprosium substituted SrBi2Ta2O9 ceramics
    V. Senthil
    T. Badapanda
    A. Chandra Bose
    S. Panigrahi
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 1602 - 1608
  • [42] Enhancement of dielectric and ferroelectric properties of dysprosium substituted SrBi2Ta2O9 ceramics
    Senthil, V.
    Badapanda, T.
    Bose, A. Chandra
    Panigrahi, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (02) : 1602 - 1608
  • [43] Ferroelectric characterization of SrBi2Ta2O9 obtained by microwave processing
    Souza, Ricson R.
    Thomazini, Daniel
    Gelfuso, Maria V.
    Amorin, Harvey
    Pereira, Altair S.
    Sousa, Vania C.
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2017, 18 (01): : 73 - 78
  • [44] Stress evolution in integrated SrBi2Ta2O9 ferroelectric layers
    Lisoni, JG
    Wafer, K
    Johnson, JA
    Goux, L
    Schwitters, M
    Paraschiv, V
    Maes, D
    Haspeslagh, L
    Caputa, C
    Zambrano, R
    Wouters, DJ
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 3 - 8
  • [45] Thermal behavior in ferroelectric SrBi2Ta2O9 thin films
    Onodera, A
    Yoshio, K
    Myint, CC
    Tanaka, M
    Hironaka, K
    Kojima, S
    FERROELECTRICS, 2000, 241 (1-4) : 159 - 166
  • [46] Phase transition in ferroelectric SrBi2Ta2O9 single crystal
    Yoshio, K
    Matsubara, I
    Yamada, A
    Onodera, A
    Sakai, A
    Yamashita, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1034 - S1037
  • [47] The similar defect chemistry of highly-doped SrBi2Ta2O9 and SrBi2Nb2O9
    Palanduz, AC
    Smyth, DM
    JOURNAL OF ELECTROCERAMICS, 2005, 14 (02) : 123 - 132
  • [48] The Similar Defect Chemistry of Highly-Doped SrBi2Ta2O9 and SrBi2Nb2O9
    A. C. Palanduz
    D. M. Smyth
    Journal of Electroceramics, 2005, 14 : 123 - 132
  • [49] Electrical and ferroelectric studies of the 2-layered SrBi2Ta2O9 based ceramics
    Swain, Sridevi
    Kumar, Pawan
    Choudhary, Ram Bilash
    PHYSICA B-CONDENSED MATTER, 2015, 477 : 56 - 63
  • [50] Electronic structure of the layered ferroelectric perovskite SrBi2Ta2O9
    Robertson, J
    Chen, CW
    Warren, WL
    FERROELECTRIC THIN FILMS V, 1996, 433 : 279 - 284
12345