Observation of Misfit Dislocations Introduced by Epi-layer Growth on 4H-SiC

被引：12

作者：

Matsuhata, Hirofumi ^{[1
]}

Yamaguchi, Hirotaka ^{[1
]}

Nagai, Ichiro ^{[1
]}

Ohno, Toshiyuki ^{[2
]}

Kosugi, Ryouji ^{[1
]}

Kinoshita, Akimasa ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

misfit dislocation; basal plane dislocation; threading edge dislocation; Burgers vector; X-ray topography; 4H-SiC; EPITAXIAL LAYER;

D O I：

10.4028/www.scientific.net/MSF.600-603.309

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

4H-SiC substrate wafers with epi-layers were observed using monochromatic synchrotron X-ray topography in grazing incidence geometries, to investigate the defects in the epi-layer. Misfit dislocations with b=+/- 1/3[11 (2) over bar0] caused by the difference in lattice parameter between the epi-layer and the substrate were observed. The misfit dislocations are located near the interface as edge dislocations, and appear at the top surface as screw dislocations on basal planes. It was observed that more than half of them were introduced from the growing epi-layer surface. The misfit dislocations and some screw dislocations with b=+/- 1/3[11 (2) over bar0] are observed to remain as basal plane dislocations at the surface, while other basal plane dislocations were converted to threading edge dislocations in the epi-layer.

引用

页码：309 / +

页数：2

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