Modeling of Resonant-Tunneling Diode with Uniform and Graded Emitter

被引：0

作者：

Fediai, Artem ^{[1
]}

Moskaliuk, Volodymyr ^{[1
]}

机构：

[1] Natl Tech Univ Ukraine, Kyiv Polytech Inst, Coll Elect, Phys & Biomed Elect Dept, Kiev, Ukraine

来源：

2013 IEEE XXXIII INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2013年

关键词：

resonant-tunneling diode; envelope-function method; current-voltage chatacteristic; modeling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Envelope function approach for resonant-tunneling diode (RTD) modeling is developed further. We have found a way of simultaneous treatment of scattering in the quantum well (QW) and incoherent transport, yielding better agreement with experimental I-V characteristics of RTDs with graded and uniform emitter. We also included all our previously developed improvements to the model to obtain maximum adequacy. Since I-V characteristic's shape is affected by numerous factors, we describe our vision on significance of each of them, based on the fulfilled verification.

引用

页码：107 / 111

页数：5

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