Erbium-implanted silica microsphere laser

被引:43
作者
Kalkman, J
Polman, A
Kippenberg, TJ
Vahala, KJ
Brongersma, ML
机构
[1] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
microsphere; laser; erbium; ion implantation;
D O I
10.1016/j.nimb.2005.08.160
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Spherical silica optical microresonators were doped with erbium ions by ion implantation at energies of 925 keV and 2.05 MeV using a rotating stage. After thermal annealing at 800 degrees C, light was coupled into the microsphere using a tapered optical fiber. An optical quality factor as high as 1.9 X 10(7) was observed at lambda = 1450 nm, corresponding to a modal loss of only 0.01 dB/cm. When pumped at 1450 nm, multi-mode lasing around 1570 urn is observed at a threshold between 150 and 250 mu W depending on the overlap between mode and Er distribution. This work demonstrates the compatibility of ion implantation and microresonator technology. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:182 / 185
页数:4
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