Solid-State Synthesis and Thermoelectric Properties of Mg2Si1-x Sn x

被引:10
作者
You, Sin-Wook [1 ]
Kim, Il-Ho [1 ]
Choi, Soon-Mok [2 ]
Seo, Won-Seon [2 ]
Kim, Sun-Uk [3 ]
机构
[1] Korea Natl Univ Transportat, Dept Mat Sci & Engn RIC ReSEM, Chungbuk 380702, South Korea
[2] Korea Inst Ceram Engn & Technol, Energy & Environm Mat Div, Seoul 153801, South Korea
[3] Res Inst Ind Sci & Technol, Funct Mat Res Dept, Pohang 790330, South Korea
关键词
Thermoelectric; magnesium silicide; solid solution; mechanical alloying; SEMICONDUCTORS;
D O I
10.1007/s11664-012-2296-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mg2Si1-x Sn (x) (0 a parts per thousand currency sign x a parts per thousand currency sign 1) solid solutions have been successfully prepared by mechanical alloying and hot pressing as a solid-state synthesis route. All specimens were identified as phases with antifluorite structure. The electrical conduction changed from n-type to p-type at room temperature for x a parts per thousand yen 0.5 due to the intrinsic properties of Mg2Sn. The absolute value of the Seebeck coefficient decreased with increasing temperature, and the electrical conductivity increased with increasing temperature; this is indicative of nondegenerate semiconducting behavior. The thermal conductivity was reduced by Mg2Si-Mg2Sn solid solution due to phonon scattering by the alloying effect.
引用
收藏
页码:1490 / 1494
页数:5
相关论文
共 12 条
[1]   Features of conduction mechanism in n-type Mg2Si1-xSnx solid solutions [J].
Fedorov, MI ;
Pshenay-Severin, DA ;
Zaitsev, VK ;
Sano, S ;
Vedernikov, MV .
TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03, 2003, :142-145
[2]   Phase formation in Mg-Sn-Si and Mg-Sn-Si-Ca alloys [J].
Kozlov, A. ;
Groebner, J. ;
Schmid-Fetzer, R. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (07) :3326-3337
[3]  
Luo W., 2009, MAT SCI B, V15796, P96
[4]   Thermoelectric properties of bi-doped Mg2Si semiconductors [J].
Tani, J ;
Kido, H .
PHYSICA B-CONDENSED MATTER, 2005, 364 (1-4) :218-224
[5]   Thermoelectric properties of P-doped Mg2Si semiconductors [J].
Tani, Jun-ichi ;
Kido, Hiroyasu .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A) :3309-3314
[6]   Highly effective Mg2Si1-xSnx thermoelectrics [J].
Zaitsev, V. K. ;
Fedorov, M. I. ;
Gurieva, E. A. ;
Eremin, I. S. ;
Konstantinov, P. P. ;
Samunin, A. Yu. ;
Vedernikov, M. V. .
PHYSICAL REVIEW B, 2006, 74 (04)
[7]  
Zaitsev V.K., 2001, P 21 INT C THERM, P151
[8]  
Zaitsev V.K., 2006, THERMOELECTRICS HDB
[9]   Synthesis of Mg2Si1-xGex thermoelectric compound by solid phase reaction [J].
Zhang, LM ;
Leng, YG ;
Jiang, HY ;
Chen, LD ;
Hirai, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 86 (03) :195-199
[10]   Thermoelectric performance of Mg2-xCaxSi compounds [J].
Zhang, Q. ;
Zhao, X. B. ;
Yin, H. ;
Zhu, T. J. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 464 (1-2) :9-12