Near-Field Radiative Transfer Between Heavily Doped SiGe at Elevated Temperatures

被引:0
作者
Zhang, Z. M. [1 ]
Enikov, E. T. [2 ]
Makansi, T. [3 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Univ Arizona, Dept Aerosp & Mech Engn, Tucson, AZ 85721 USA
[3] Tempronics Inc, Tucson, AZ 85750 USA
来源
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME | 2012年 / 134卷 / 09期
基金
美国国家科学基金会;
关键词
doped SiGe; high temperature; nanoscale; near field; thermal radiation; HEAT-TRANSFER; THERMAL-RADIATION; THERMOELECTRIC FIGURE; SILICON; PERFORMANCE;
D O I
10.1115/1.4006168
中图分类号
O414.1 [热力学];
学科分类号
摘要
SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperaturedependent electric resistivity of several silicon-rich alloys with different doping type and concentration. Fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux. [DOI: 10.1115/1.4006168]
引用
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页数:7
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