Dislocation Formation in Epitaxial film by Propagation of Shallow Dislocations on 4H-SiC substrate

被引：5

作者：

Ishikawa, Y. ^{[1
]}

Sato, K. ^{[1
]}

Okamoto, Y. ^{[2
]}

Hayashi, N. ^{[2
]}

Yao, Y. ^{[1
]}

Sugawara, Y. ^{[1
]}

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan

[2] ACT Corp, Minami, Kyoto, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

dislocation; triangular defect; stacking fault; dislocation array; shallow defect; polish; half-loop;

D O I：

10.4028/www.scientific.net/MSF.717-720.383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the depth distribution of shallow defects on the wafers were dependent on wafer manufacturer. Most of the serious defects, such as the dislocation array (DA), triangular stacking fault (TRSF), and triangular defect (TRD), in epitaxial film were demonstrated to be caused by shallow dislocations on the surface of the wafers. Revised mechanical polishing can reduce the DA, TRSF, and TRD densities in epitaxial film.

引用

页码：383 / +

页数：2

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