Low temperature sintering and microwave dielectric properties of Zn3Mo2O9 ceramic

被引：14

作者：

Li, Chunchun ^{[1
,2
]}

Wen, Wangxi ^{[3
]}

Xiang, Huaicheng ^{[2
]}

Fang, Liang ^{[2
,3
]}

Sun, Yihua ^{[3
]}

机构：

[1] Guilin Univ Technol, Coll Informat Sci & Engn, Guangxi Key Lab Embedded Technol & Intelligent In, Guilin 541004, Peoples R China

[2] Guilin Univ Technol, State Key Lab Breeding Base Nonferrous Met & Spec, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Coll Mat Sci & Engn, Guilin 541004, Peoples R China

[3] China Three Gorges Univ, Coll Mat & Chem Engn, Yichang 443002, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 03期

关键词：

RAMAN-SPECTRA; SCHEELITE; ND; SYSTEM; CA; BA; LA; SM; LN;

D O I：

10.1007/s10854-017-8100-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crystal structure and dielectric properties of Zn3Mo2O9 ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn3Mo2O9 crystallized in a monoclinic crystal structure and reminded stable up to1020 A degrees C. Dense ceramics with high relative density (similar to 92.3%) were obtained when sintered at 1000 A degrees C and possessed good microwave dielectric properties with a relative permittivity (epsilon (r) ) of 8.7, a quality factor (Q x f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (tau (f) ) of around - 79 ppm/A degrees C. With 5 wt% B2O3 addition, the sintering temperature of Zn3Mo2O9 ceramic was successfully lowered to 900 A degrees C and microwave dielectric properties with epsilon (r) = 11.8, Q x f = 20,000 GHz, and tau (f) = - 79.5 ppm/A degrees C were achieved.

引用

页码：1907 / 1913

页数：7

共 28 条

[1] TEMPERATURE DEPENDENCE OF DIELECTRIC CONSTANTS OF CUBIC IONIC COMPOUNDS [J].