Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

被引：21

作者：

Lee, Chang-Ju ^{[1
]}

Kwon, Young-Jin ^{[1
]}

Won, Chul-Ho ^{[1
]}

Lee, Jung-Hee ^{[1
]}

Hahm, Sung-Ho ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Taegu 702701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

PHOTODETECTORS; LAYER; OXIDE;

D O I：

10.1063/1.4821133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We proposed and fabricated a metal-insulator-semiconductor-insulator-metal type dual-wavelength sensitive UV sensor by using an AlGaN/GaN hetero-structure layer epitaxially grown on a sapphire substrate and a thin Al2O3 layer inserted between AlGaN and Ni Schottky electrodes to reduce dark current and improve the UV/visible rejection ratio. The proposed sensor shows high photo-responsive current to both UV wavelength regimes with a significantly improved UV/visible rejection ratio under the regime of the GaN-related UV response. Cut-off wavelengths can be controlled by changing the bias below and above 10 V. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 50 条

[21] Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
Chumbes, EM
Smart, JA
Prunty, T
Shealy, JR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 416 - 419
[22] Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors
Feng Qian
Du Kai
Li Yu-Kun
Shi Peng
Feng Qing
CHINESE PHYSICS LETTERS, 2013, 30 (12)
[23] Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors
冯倩
杜锴
李宇坤
时鹏
冯庆
Chinese Physics Letters, 2013, 30 (12) : 134 - 137
[24] Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors
Shuxin Tan
Takashi Egawa
Journal of Semiconductors, 2019, 40 (04) : 49 - 53
[25] Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors
Ali, Ghusoon M.
Chakrabarti, P.
APPLIED PHYSICS LETTERS, 2010, 97 (03)
[26] Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal-insulator-semiconductor transistors
Tan, Shuxin
Egawa, Takashi
JOURNAL OF SEMICONDUCTORS, 2019, 40 (04)
[27] High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
Colon, Albert
Shi, Junxia
SOLID-STATE ELECTRONICS, 2014, 99 : 25 - 30
[28] Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal-insulator-semiconductor structures
Wang, M. J.
Shen, B.
Wang, Y.
Huang, S.
Xu, F. J.
Xu, J.
Qin, Z. X.
Yang, Z. J.
Zhang, G. Y.
PHYSICS LETTERS A, 2007, 371 (03) : 249 - 253
[29] Electrical Properties of Back-to-Back Metal/Insulator/Semiconductor Diodes Based on AlGaN/GaN Heterostructure
Osvald, J.
2016 11TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2016, : 231 - 234
[30] Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors
Liu, Han-Yin
Hsu, Wei-Chou
Chou, Bo-Yi
Wang, Yi-Hsuan
Sun, Wen-Ching
Wei, Sung-Yen
Yu, Sheng-Min
Chiang, Meng-Hsueh
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (12) : 4062 - 4069

← 1 2 3 4 5 →