Surface smoothing of diamond membranes by reactive ion etching process

被引:50
作者
Vivensang, C
FerlazzoManin, L
Ravet, MF
Turban, G
Rousseaux, F
Gicquel, A
机构
[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92225 BAGNEUX,FRANCE
[2] UNIV PARIS 13,CNRS,LAB INGN MAT & HAUTES PRESS,F-93430 VILLETANEUSE,FRANCE
关键词
diamond; planarization; membrane; reactive ion etching;
D O I
10.1016/0925-9635(95)00368-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper describes a procedure based on reactive ion etching developed to reduce the surface roughness of CVD diamond thin films. The technique involves etching a bilayer made up of diamond and a planarizing SiO2 layer in an SF6-O-2 plasma mixture. Etching conditions have been determined which yield equal rates for both diamond and the SiO2 coverlayer and favour the removal of diamond peaks. Smoothed surfaces have been characterized by SEM, AFM and XPS: the results exhibit a significant decrease in roughness. This novel technique offers promising prospects for polishing thin diamond membranes for X-ray lithography applications without the removal of significant amounts of diamond material. The optical transmittance of diamond membranes, mainly affected by light scattering due to surface roughness, is significantly improved using this method of planarization.
引用
收藏
页码:840 / 844
页数:5
相关论文
共 10 条
  • [1] ANGER E, 1995, VIDE SCI TECHNIQUE A, V276, P139
  • [2] DIAMOND DEPOSITION IN A BELL-JAR REACTOR - INFLUENCE OF THE PLASMA AND SUBSTRATE PARAMETERS ON THE MICROSTRUCTURE AND GROWTH-RATE
    GICQUEL, A
    ANGER, E
    RAVET, MF
    FABRE, D
    SCATENA, G
    WANG, ZZ
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 417 - 424
  • [3] SPECTROSCOPIC ANALYSIS AND CHEMICAL-KINETICS MODELING OF A DIAMOND DEPOSITION PLASMA REACTOR
    GICQUEL, A
    HASSOUNI, K
    FARHAT, S
    BRETON, Y
    SCOTT, CD
    LEFEBVRE, M
    PEALAT, M
    [J]. DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 581 - 586
  • [4] SMOOTHING OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS BY ION-BEAM IRRADIATION
    HIRATA, A
    TOKURA, H
    YOSHIKAWA, M
    [J]. THIN SOLID FILMS, 1992, 212 (1-2) : 43 - 48
  • [5] JIN S, 1993, 2 INT C APPL DIAM FI
  • [6] LLEWELLYN I, 1994, SPIE, V2286, P198
  • [7] Ravet M., 1993, APPL DIAMOND FILMS R, P77
  • [8] VIVENSANG C, 1995, P 10 INT C PLASM PRO, V275, P167
  • [9] CHEMICAL-VAPOR-DEPOSITION AND CHARACTERIZATION OF SMOOTH (100)-FACETED DIAMOND FILMS
    WILD, C
    KOIDL, P
    MULLERSEBERT, W
    WALCHER, H
    KOHL, R
    HERRES, N
    LOCHER, R
    SAMLENSKI, R
    BRENN, R
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 158 - 168
  • [10] YOSHIKAWA M, 1990, SPIE DIAMOND OPTIC 3, V1325, P210