N-polar GaN epitaxy and high electron mobility transistors

被引：194

作者：

Wong, Man Hoi ^{[1
,2
]}

Keller, Stacia ^{[1
,2
]}

Nidhi, Sansaptak Dasgupta ^{[1
,2
]}

Denninghoff, Daniel J. ^{[1
,2
]}

Kolluri, Seshadri ^{[1
,2
]}

Brown, David F. ^{[1
,2
]}

Lu, Jing ^{[1
,2
]}

Fichtenbaum, Nicholas A. ^{[1
,2
]}

Ahmadi, Elaheh ^{[1
,2
]}

Singisetti, Uttam ^{[3
]}

Chini, Alessandro ^{[4
]}

Rajan, Siddharth ^{[5
]}

DenBaars, Steven P. ^{[1
,2
]}

Speck, James S. ^{[1
,2
]}

Mishra, Umesh K. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[4] Univ Modena & Reggio Emilia, Dept Informat Engn, Modena, Italy

[5] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 07期

基金：

美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; FIELD-EFFECT TRANSISTORS; GAIN CUTOFF FREQUENCY; C-PLANE SAPPHIRE; ALGAN/GAN HEMTS; FACE GAN; THIN-FILMS; IMPURITY INCORPORATION; DISLOCATION REDUCTION;

D O I：

10.1088/0268-1242/28/7/074009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the progress of N-polar (000 (1) over bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In, Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

引用

页数：22

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