Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering

被引：28

作者：

Kim, Doo-Soo ^{[1
]}

Park, Ji-Hyeon ^{[1
]}

Lee, Su-Jeong ^{[1
]}

Ahn, Kyung-Jun ^{[2
]}

Lee, Mi-So ^{[3
,4
]}

Ham, Moon-Ho ^{[3
,4
]}

Lee, Woong ^{[5
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] SNTEK Co Ltd, Suwon 441813, Gyeonggi, South Korea

[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[4] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[5] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 03期

关键词：

Al-doped ZnO (AZO); Pulsed DC magnetron sputtering; Oxygen/argon ratio; Transparent conductive oxide; THIN-FILMS; LASER DEPOSITION; GROWTH; GA;

D O I：

10.1016/j.mssp.2013.02.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 degrees C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O-2/Ar supply ratio from 0 to 0.167. With the increasing O-2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O-2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10(-4) Omega cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：997 / 1001

页数：5

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