Flicker noise in ion-implanted silicon structures

被引：1
作者：
Makoviychuk, MI
Parshin, EO
Rekshinskii, VA
机构：
[1] Institute of Microelectronics, Russian Academy of Sciences, Yaroslavl
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷
关键词：
D O I：
10.1016/S0168-583X(97)00084-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The low-frequency noise spectra of ion-implanted silicon structures with various geometries are measured. The spectra exhibit thermal noise and f(-y) (flicker) noise exclusively. The flicker noise exhibits a strong dependence on the technology parameters (implantation energy and dose, post-implantation anneal temperature). A discussion of the results is given in terms of a volume effect. Noise measurements on implanted layers, produced under carefully controlled conditions, show promise as a tool to investigate flicker noise.
引用
收藏
页码：414 / 417
页数：4
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