Flicker noise in ion-implanted silicon structures

被引：1

作者：

Makoviychuk, MI

Parshin, EO

Rekshinskii, VA

机构：

[1] Institute of Microelectronics, Russian Academy of Sciences, Yaroslavl

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(97)00084-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The low-frequency noise spectra of ion-implanted silicon structures with various geometries are measured. The spectra exhibit thermal noise and f(-y) (flicker) noise exclusively. The flicker noise exhibits a strong dependence on the technology parameters (implantation energy and dose, post-implantation anneal temperature). A discussion of the results is given in terms of a volume effect. Noise measurements on implanted layers, produced under carefully controlled conditions, show promise as a tool to investigate flicker noise.

引用

页码：414 / 417

页数：4

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