28V planar GaAs MESFETs for wireless base-station power amplifiers

被引：0

作者：

Yang, B ^{[1
]}

Halder, S ^{[1
]}

Ye, PD ^{[1
]}

Daum, G ^{[1
]}

Dai, W ^{[1
]}

Frei, M ^{[1
]}

Ng, K ^{[1
]}

Bude, J ^{[1
]}

Hwang, JCM ^{[1
]}

Wilk, G ^{[1
]}

机构：

[1] Agere Syst, Allentown, PA 18109 USA

来源：

2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST | 2005年

关键词：

breakdown voltage; planar MESFET; linearity; intermodulation product;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V(gs) = -1.5V) and 30V at on state (V(gs) = 0.5 V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is -34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.

引用

页码：244 / 247

页数：4

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