PARAMETER EXTRACTION METHOD OF BAND PARAMETERS FOR III-V COMPOUND SEMICONDUCTORS

被引：0

作者：

Lysak, V. ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

2012 INTERNATIONAL CONFERENCE ON MATHEMATICAL METHODS IN ELECTROMAGNETIC THEORY (MMET) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Band parameters of group III-V compound semiconductors GaAs, InAs and InP are fitted. Because of the random distribution of elements from the same group within the alloy lattice, exact calculations of material parameters are hardly possible. That is why we tried to fit parameters using as many experimental data as possible. Emphasizing the importance of band structure calculation, direct energy band gap, Passlerr parameters, Luttinger parameters, deformation potentials, energy parameter and correction parameter are fitted, which are the most controversial in literature.

引用

页码：527 / 530

页数：4

共 7 条

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