Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

被引：51

作者：

Cheng, Shaoheng ^{[1
,2
]}

Sang, Liwen ^{[3
]}

Liao, Meiyong ^{[2
]}

Liu, Jiangwei ^{[1
]}

Imura, Masataka ^{[2
]}

Li, Hongdong ^{[1
]}

Koide, Yasuo ^{[2
,4
]}

机构：

[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[2] NIMS, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044, Japan

[3] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan

[4] NIMS, Ctr Mat Res Low Carbon Emiss, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

关键词：

FIELD-EFFECT TRANSISTORS; DIODES; FILMS; LAYER;

D O I：

10.1063/1.4770059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase delta-Ta2O5 film is achieved on diamond by annealing the amorphous Ta2O5 film deposited by a sputter-deposition technique. The electrical properties of the Ta2O5 thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10(-8) A/cm(2) for the as-deposited amorphous Ta2O5 film and 10(-2) A/cm(2) for the crystallized film, which is 10(8) and 10(2) times lower than that of the Schottky diode at a forward bias of -3V, respectively. The dielectric constant of the amorphous Ta2O5 films is measured to be 16 and increases to 29 after annealing at 800 degrees C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta2O5 thin films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770059]

引用

页数：5

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