1.30-μm GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD

被引：13

作者：

Mitomo, JO ^{[1
]}

Yokozeki, M

Sato, Y

Hirano, Y

Hino, T

Narui, H

机构：

[1] Sony Corp, Mat Lab, Kanagawa 2430014, Japan

[2] Sony EMCS Corp, Kanagawa 2430021, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 05期

关键词：

1.3-mu m laser emission; dilute nitride materials; GaInNAs; lifetime; metal-organic chemical vapor deposition; (MOCVD); optical fiber telecommunications; semiconductor lasers;

D O I：

10.1109/JSTQE.2005.854150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and the device characteristics. At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. It is clear that the growth rate is an important parameter for crystal quality and device characteristics. As a result of the optimization of the growth rate and the other growth conditions, a high characteristic temperature of 180 K and a long device lifetime over 1000 h were obtained.

引用

页码：1099 / 1102

页数：4