Theoretical investigation of the electronic structure and optical properties of zinc-doped magnesium oxide

被引:23
|
作者
Wang, Jia [1 ]
Tu, Yan [1 ]
Yang, Lanlan [1 ]
Tolner, Harm [2 ]
机构
[1] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
[2] Tolner Technol, Genestetlaan 11, NL-5615 EG Eindhoven, Netherlands
基金
中国国家自然科学基金;
关键词
MgO; Zinc doping; Electronic structure; Deep-UV; Exciton binding energy; Optical properties; 1ST PRINCIPLES; ZNO; SEMICONDUCTORS; APPROXIMATION; GAS; MGO;
D O I
10.1007/s10825-016-0906-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the electronic structure and optical properties of () are investigated within the framework of the density functional theory (DFT), the GW method, and the Bethe-Salpeter equation (BSE). We find that zinc doping can lower the band gap of pure MgO via the Zn 4s states near the Fermi level and reduce the lattice symmetry, both of which will affect the optical properties. The energy of the first absorption peak decreases as the concentration of zinc increases, so are the exciton energy and binding energy of the lowest excited state. The results nicely fit to published experimental results and are compared to those of the simple hydrogen-like atom model for excitons. As the lowest excited state is closely related to light emission at that energy according to Kasha's rule, zinc doping will lower the light emission energy of pure MgO, while still exhibiting an exciton binding energy much higher than that of at room temperature. This means that materials are perfectly suited for optoelectronic devices operating in the deep blue and near-ultraviolet (UV) range.
引用
收藏
页码:1521 / 1530
页数:10
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