Calculation of phonon spectrum and thermal properties in suspended aOE©100⟩ In X Ga1-X As nanowires

被引:6
作者
Salmani-Jelodar, Mehdi [1 ,2 ]
Paul, Abhijeet [1 ,2 ]
Boykin, Timothy [3 ]
Klimeck, Gerhard [1 ,2 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Network Computat Nanotechnol, W Lafayette, IN 47907 USA
[3] Univ Alabama Huntsville, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
基金
美国国家科学基金会;
关键词
Phonon dispersion relation; Indium gallium arsenide; Nanowire; Specific heat; Thermal conductance; STRAIN; CONDUCTIVITY; DISPERSION; DIAMOND; MODEL; SI; GE;
D O I
10.1007/s10825-012-0389-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The phonon spectra in zinc blende InAs, GaAs and their ternary alloy nanowires (NWs) are computed using an enhanced valence force field (EVFF) model. The physical and thermal properties of these nanowires such as sound velocity, elastic constants, specific heat (C (v) ), phonon density of states, phonon modes, and the ballistic thermal conductance are explored. The calculated transverse and longitudinal sound velocities in these NWs are similar to 25% and 20% smaller compared to the bulk velocities, respectively. The C (v) for NWs are about twice as large as the bulk values due to higher surface to volume ratio (SVR) and strong phonon confinement in the nanostructures. The temperature dependent C (v) for InAs and GaAs nanowires show a cross-over at 180A degrees K due to higher phonon density in InAs nanowires at lower temperatures. With the phonon spectra and Landauer's model the ballistic thermal conductance is reported for these III-V NWs. The results in this work demonstrate the potential to engineer the thermal behavior of III-V NWs.
引用
收藏
页码:22 / 28
页数:7
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