Phonological short-term memory, working memory and foreign language performance in intensive language learning

被引:185
作者
Kormos, Judit [1 ]
Safar, Anna [2 ]
机构
[1] Univ Lancaster, Dept Linguist & English Language, Lancaster LA1 4YT, England
[2] Eotvos Lorand Univ, Dept English Appl Linguist, Budapest, Hungary
关键词
D O I
10.1017/S1366728908003416
中图分类号
H0 [语言学];
学科分类号
030303 ; 0501 ; 050102 ;
摘要
In our research we addressed the question what the relationship is between phonological short-term and working memory capacity and performance in an end-of-year reading, writing, listening, speaking and use of English test. The participants of our study were 121 secondary school students aged 15-16 in the first intensive language training year of a bilingual education program in Hungary. The participants performed a non-word repetition test and took a Cambridge First Certificate Exam. Fifty students were also tested with a backward digit span test, measuring their working memory capacity. Our study indicates that phonological short-term memory capacity plays a different role in the case of beginners and pre-intermediate students in intensive language learning. The backward digit span test correlated very highly with the overall English language competence, as well as with reading, listening, speaking and use of English (vocabulary and grammar) test scores.
引用
收藏
页码:261 / 271
页数:11
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