The acceptor level for vanadium in 4H and 6H SiC

被引：11

作者：

Zvanut, ME

Lee, W

Mitchel, WC

Mitchell, WD

Landis, G

机构：

[1] Univ Alabama, Dept Phys, Birmingham, AL 35244 USA

[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

SiC; EPR; semi-insulating; vanadium; carbon vacancy;

D O I：

10.1016/j.physb.2005.12.089

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron paramagnetic resonance (EPR) and temperature-dependent Hall measurements were performed on seven different vanadiumdoped semi-insulating SiC samples. Comparison of the EPR data and carrier activation energy suggests that the acceptor level for vanadium is 1.1 eV below the conduction band edge (E-c) in 4H SiC and within 0.86 of Ec in the 6H polytype. Photo-induced EPR results support the level assignments. However, analysis of the V4+ spectra in 4H samples suggests that the dominant vanadium EPR signal monitored in the 4H samples used for this experiment does not represent a simple isolated impurity. Rather, the results reflect a strained or complex defect. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：346 / 349

页数：4

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